AP3000A-00 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON PIN DIODE CHIP

AP3000A-00
SILICON PIN DIODE CHIP
DESCRIPTION:
The AP3000C-11 is a Passivated
Epitaxial Silicon PIN Diode Housed in
a Hermetically Sealed Glass Package.
This Device is Designed to Cover a
Wide Range of Control Applications
Such as RF Switching,Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
MAXIMUM RATINGS
I_F
100 mA
V_R
P_DISS
θ_JC
300 V
250 mW @ T_A = 25 ^OC
20 ^OC/W
PACKAGE STYLE 01
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
C_J
V_R = 50 V
V_R = 40 V
f = 1.0 MHz
R_S
I_F = 50 mA
f = 100 MHz
T_L
I_F =10 mA
I_R = 6.0 mA
T_rr
I_F =20 mA
I_R = 100 mA
MINIMUM
300
TYPICAL
1000
100
MAXIMUM
0.2
0.6
UNITS
V
pF
Ohms
nS
nS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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