AP1266 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON PIN DIODE

SILICON PIN DIODE
AP1266
DESCRIPTION:
The AP1266 is a Passivated Epitaxial
Silicon PIN Diode in a Hermetically
Sealed Glass Package Designed for
Large Signal Switches.
PACKAGE STYLE -11
MAXIMUM RATINGS
I
100 mA
V
P_DISS
T_J
T_STG
T_SOLD
200 V
1.0 W @ T_C = 25 ^OC
-65 ^OC to +175 ^OC
-65 ^OC to +175 ^OC
200 ^OC
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_B
I_R = 10 µA
C_T
V = 50 V
f = 1.0 MHz
R_S
T_L
I-REGION
I_F = 50 mA
I_F = 10 mA
I_R = 6.0 mA
I-REGION WIDTH
f = 100 MHz
MINIMUM
200
TYPICAL
3.0
3.0
MAXIMUM
1.5
0.6
UNITS
V
pF
Ohms
µS
mS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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