AP1000C-11 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON PIN DIODE

AP1000C-11
SILICON PIN DIODE
DESCRIPTION:
The AP1000C-11 is a Passivated
Epitaxial Silicon PIN Diode Housed in
a Hermetically Sealed Glass Package.
This Device Iis Designed to Cover a
Wide Range of Control Applications
Such as RF Switching, Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
PACKAGE STYLE 01
MAXIMUM RATINGS
I
100 mA
V
P_DISS
T_J
T_STG
θ_JC
100 V
250 mW @ T_A = 25 ^OC
-65 ^OC to +175 ^OC
-65 ^OC to +175 ^OC
30 ^OC/W
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_B
I_R = 10 µA
C_J
V_R = 50 V
V_R = 40 V
f = 1.0 MHz
C_P
f = 1.0 MHz
L_S
R_S
I_F = 10 mA
f = 500 MHz
T_L
I_F = 10 mA I_R = 6.0 mA
T_rr
I_F = 20 mA I_R = 100 mA @ 90%
I-REGION
MINIMUM
100
NONE
TYPICAL MAXIMUM
0.15
0.10
1.0
1.5
100
20
12
UNITS
V
pF
pF
nH
Ohms
nS
nS
µM
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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