AP1000B-00 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON PIN DIODE CHIP

AP1000B-00
SILICON PIN DIODE CHIP
DESCRIPTION:
The AP1000B-00 is a Planar Silicon
PIN Diode Chip Designed for High
Speed Switch and Limiter Applications
Up to 18 GHz.
FEATURES INCLUDE:
• Low Capacitance - 0.10 pF Typical
• Fast Switching - 10 nS Typical
• SiO₂ Passivation
MAXIMUM RATINGS
I_F
100 mA
V_R
P_DISS
T_J
T_STG
θ_JC
100 V
0.5 W @ T_A = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +150 ^OC
50 ^OC/W
PACKAGE STYLE CHP152
0.002” ±0.001”
0.015”±0.002” SQ.
Anode = Pad
Cathode = Bottom Side
CHARACTERISTICS TA = 25 ^OC
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
C_J
V_R = 10 V
f = 1.0 MHz
MINIMUM
100
R_S
I_F = 20 mA
f = 100 MHz
T_L
I_F = 10 mA
I_R = 6.0 mA
t_rr
I_F = 20 mA
V_R = 10 V
TYPICAL
1.0
100
MAXIMUM
0.10
2.0
10
UNITS
V
pF
Ohms
nS
nS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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