AP1000A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON PIN DIODE

SILICON PIN DIODE
AP1000A
DESCRIPTION:
The AP1000A is a Diffused Epitaxial
Silicon PIN Diode.
MAXIMUM RATINGS
I_C
100mA
V_CE
P_DISS
T_J
T_STG
θ_JC
T_SOLD
100 V
500 mW @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +175 ^OC
50 ^OC/W
5.0 Sec./200 ^OC
PACKAGE STYLE 15
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_B
I_R = 10 µA
C_J
V_R = 6.0 V
f = 1.0 MHz
I_F = 20 mA
R_S
I_F = 100 mA
f = 1.0 GHz
T_L
I_F = 10 mA I_R = 6.0 mA
T_S
10%-90% / 90%-10%
C_P
f = 1.0 MHz
L_S
MINIMUM
100
TYPICAL
100
0.15
2.5
MAXIMUM
0.05
2.6
2.0
10
UNITS
V
pF
Ohms
nS
nS
pF
nH
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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