AM82731 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

AM82731
NPN RF POWER TRANSISTOR
DESCRIPTION:
The AM82731 is a Common Base
Device Designed for Pulsed S-Band
Radar Amplifier Applications.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
0.9 A
V_CBO
P_DISS
T_J
T_STG
θ_JC
50 V
27 W @ T_C = 25 ^OC
-55 ^OC to+200 ^OC
-55 ^OC to+200 ^OC
6.5 ^OC/W
PACKAGE STYLE 400 2L FLG
1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 2.0 mA
BV_CER
I_C = 2.0 mA
I_CES
V_CE = 2.0 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5 V I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
50
50
2.0
3.5
10
UNITS
V
V
mA
V
---
P_G
V_CE = 30 V P_OUT = 3.0 W f = 2700 to 3100 MHz
5.7
6.5
dB
η_C
Pulse Width = 100 µS
Duty Cycle = 10%
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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