AM82731-050 Datasheet, PDF (1/1 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM82731-050
NPN RF POWER TRANSISTOR
DESCRIPTION:
The AM82731-050 is a Common
Base Device Designed for Pulsed S-
Band Pulse output and driver
Applications.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
4.0 A
V_CC
46 V
P_DISS
100 W @ T_C ≤ 50 °C
T_J
-65 °C to+250 °C
T_STG
-65 °C to+200 °C
θ_JC
2.0 °C/W
PACKAGE STYLE 400 2L FLG
1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 15 mA
BV_CER
I_C = 15 mA
R_BE = 10 Ω
BV_EBO
I_E = 2.0 mA
I_CES
V_CE = 40 V
h_FE
V_CE = 5 V
I_C = 1.5 A
MINIMUM TYPICAL MAXIMUM
55
55
3.5
10
30
P_OUT
η_C
P_G
V_CC = 40 V
50
P_IN = 12.5 W f = 2.7 to 3.1 GHz
30
6.0
56
35
6.5
Note: Pulse Width = 100 μS
Duty Cycle = 10%
UNITS
V
V
V
mA
---
W
%
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
1/1
Specifications are subject to change without notice.