AM82731-012 Datasheet, PDF (1/1 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM82731-012
NPN RF POWER TRANSISTOR
DESCRIPTION:
The AM82731-012 is a Common
Base Device Designed for Pulsed S-
Band Pulse output and driver Radar
Amplifier Applications.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
2.0 A
V_CC
46 V
P_DISS
50 W @ T_C ≤ 50 °C
T_J
-65 °C to+250 °C
T_STG
-65 °C to+200 °C
θ_JC
4.0 °C/W
PACKAGE STYLE 400 2L FLG
1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 7.0 mA
BV_CER
I_C = 7.0 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 40 V
h_FE
V_CE = 5 V
I_C = 600 mA
MINIMUM TYPICAL MAXIMUM
55
55
3.5
0.5
30
300
UNITS
V
V
V
mA
---
P_OUT
η_C
V_CC = 40 V
P_IN = 3.0 W f = 2.7 to 3.1 GHz
12
30
W
%
P_G
6.0
dB
Note: Pulse Width = 100 μS
Duty Cycle = 10%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
1/1
Specifications are subject to change without notice.