AM82731-001 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

AM82731-001
NPN RF POWER TRANSISTOR
DESCRIPTION:
The AM82731-001 is a Common
Base Device Designed for Pulsed S-
Band Radar Amplifier Applications.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
0.45 A
V_CC
34 V
P_DISS
11.5 W @ T_C = 25 °C
T_J
-65 °C to+250 °C
T_STG
-65 °C to+200 °C
θ_JC
13.0 °C/W
PACKAGE STYLE 400 2NL FLG
DIM
A
.025 x 45°
A
2X B
4x .062 x 45°
B
ØD
C
F
C
E
D
E
F
G
G
H
I
H
J
I
K
L
J
K
P
L
MN
M
N
P
MINIMUM
inches / mm
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.193 / 4.90
.450 / 11.43
.125 / 3.18
MAXIMUM
inches / mm
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CER
I_C = 1.0 mA
R_BE = 10 Ω
I_CES
V_CE = 30 V
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
45
45
0.5
3.5
10
UNITS
V
V
mA
V
---
P_OUT
η_C
V_CE = 30 V
P_IN = 0.3 W f = 2.7 to 3.1 GHz
1.0
27
1.1
30
W
%
P_G
5.2
5.6
dB
Note: Pulse Width = 100 μS
Duty Cycle = 10%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
1/1
Specifications are subject to change without notice.