AM81214-030 Datasheet, PDF (1/1 Pages) STMicroelectronics – L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM81214-030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM81214-030 is Designed for
1215 – 1400 MHz, L-Band Radar
Applications.
FEATURES:
• Internal Input/Output Matching Network
• P_G = 7.2 dB at 5.0 W(peak)/1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.75 A
V_CC
32 V
P_DISS
63 W @ T_C = 25 °C
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
2.4 °C/W
PACKAGE STYLE .250 2L FLG
COMMON BASE
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 20 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CES
V_CE = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
55
55
3.5
5.0
15
150
UNITS
V
V
V
mA
---
P_IN
26
36
W
P_G
V_CC = 28 V
P_IN = 5.0 W f = 1215 to 1400 MHz
7.2
8.5
dB
η_C
45
49
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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