AM81214-015 Datasheet, PDF (1/2 Pages) STMicroelectronics – L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM81214-015
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM81214-015 is an NPN silicon
bipolar transistor designed for L-Band
pulsed radar applications. It utilizes internal
matching and gold metalization for high
reliability and good VSWR capability.
FEATURES:
• 1.2 to 1.4 GHz operation
• Internal Input/Output Matching Network
• P_G = 8.5 dB at 14.5 W/1400 MHz
• Omnigold™ Metalization System
• 5:1 VSWR capability rated at conditions
MAXIMUM RATINGS
I_C
1.8 A
V_CC
32 V
P_DISS
37.5 W @ T_C = 25 °C
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
4.0 °C/W
PACKAGE STYLE .250 2L FLG
Common Base
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 15 mA
BV_CER
I_C = 15 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.5 mA
I_CES
V_CE = 28 V
V_BE = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
48
48
3.5
1.5
30
300
UNITS
V
V
V
mA
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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