AM1821-3 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN RF POWER TRANSISTOR

AM1821-3
NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM1821-3 is a Common
Base Device Designed for Pulsed S-
Band Radar Amplifier Applications.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
0.9 A
V_CBO
50 V
P_DISS
11.6 W @ T_C = 25 °C
T_J
-55 °C to+200 °C
T_STG
-55 °C to+200 °C
θ_JC
15 °C/W
PACKAGE STYLE 400 2L FLG (E)
1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 2.0 mA
BV_CER
I_C = 2.0 mA
I_CES
V_CE = 2.0 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5 V I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
50
50
2.0
3.5
10
UNITS
V
V
mA
V
---
P_G
V_CC = 24 V P_OUT = 3.0 W f = 1800 to 2100 MHz
7.8
dB
η_C
Pulse Width = 300 µS
Duty Cycle = 10%
50
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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