AM1011-500 Datasheet, PDF (1/1 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

AM1011-500
NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM1011-500 is a Common
Base Device Designed for Pulsed L-
Band Radar Amplifier Applications.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Hermetic Metal/Ceramic Package
MAXIMUM RATINGS
I_C
27 A
V_CBO
P_DISS
T_J
T_STG
θ_JC
55 V
1360 W @ T_C = 25 ^OC
-65 ^OC to+200 ^OC
-65 ^OC to+200 ^OC
0.11 ^OC/W
PACKAGE STYLE 400 X 600 2L FLG
MINIMUM MAXIMUM
Inches/m Inches/mm
m
A .195/4.95 .205/5.21
B
.130/3.30
C .380/9.65 .390/9.91
D .570/14.48
E .593/15.06 .607/15.42
F .790/20.07 .810/20.57
G .995/25.27 1.005/25.53
H .002/0.05 .006/0.15
I .055/1.40 .065/1.65
J .110/2.79 .130/3.30
K
.230/5.84
L .393/9.98 .407/10.34
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 50 mA
I_CES
V_CE = 50 V
BV_EBO
I_E = 30 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
70
70
40
3.0
10
200
UNITS
V
V
mA
V
---
P_G
V_CE = 50 V
P_OUT = 500 W
f = 1090 MHz
8.5
8.5
dB
η_C
Pulse Width = 32 µS
Duty Cycle = 2%
40
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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