AM0912-300 Datasheet, PDF (1/2 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM0912-300
RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM0912-300 is a Common
Base Transistor Designed for DME
and TACAN Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
I_C
24 A
V_CC
50 V
P
DISS
940 W @ T_C = ≤ 100 °C
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
0.16 °C/W
PACKAGE - .400 2L FLG(A)
4x .062 x 45°
2xB
A
.040 x 45°
C
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
E
D
G
H
I
J
K
L
M IN IM U M
inches / mm
.135 / 3.43
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03
.490 / 12.45
.690 / 17.53
.890 / 22.61
.003 / 0.08
.052 / 1.32
.118 / 3.00
.193 / 4.90
.100 / 2.54
F
2xR
NP
M
M AXIM UM
inches / mm
.145 / 3.68
.120 / 3.05
.396 / 10.06
.130 / 3.30
.407 / 10.34
.510 / 12.95
.710 / 18.03
.910 / 23.11
.006 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
BV_CER
BV_EBO
I_CES
h_FE
I_C = 50 mA
I_C = 50 mA
I_E = 15 mA
V_CB = 50 V
V_CE = 5.0 V
R_BE = 10 Ω
I_C = 5.0 A
P_OUT
P_G
η_C
V_CC = 50 V f = 960 to 1215 MHz P_IN = 60 W
Pulse Width = 10 µS Duty Cycle = 10%
MINIMUM TYPICAL MAXIMUM
65
65
3.0
30
10
UNITS
V
V
V
mA
---
300
330
W
7.0
7.4
dB
38
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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