AM0912-150 Datasheet, PDF (1/1 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM0912-150
RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM0912-150 is a Common
Base Transistor Designed for TCAS
and JTIDS Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
I_C
16.5 A
V_CC
35 V
P
DISS
300 W @ T_C = ≤ 100 °C
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
0.57 °C/W
PACKAGE - .400 X .500 2L FLG
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CBO
BV_CES
BV_EBO
I_CES
h_FE
I_C = 60 mA
I_C = 100 mA
I_E = 10 mA
V_CB = 35 V
V_CE = 5.0 V
I_C = 5.0 A
P_OUT
P_G
η_C
V_CC = 35 V f = 960 to 1215 MHz P_IN = 26.7 W
MINIMUM TYPICAL MAXIMUM
55
55
3.5
25
20
300
330
7.0
7.4
38
45
UNITS
V
V
V
mA
---
W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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