AM0912-080 Datasheet, PDF (1/2 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM0912-080
RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM0912-080 is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
I_C
7.0 A
V_CB
P
DISS
T_J
T_STG
θ_JC
50 V
220 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
0.80 ^OC/W
PACKAGE - .400 x .400 2NLFL
1 = COLLECTER 2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CBO
BV_CER
BV_EBO
I_CBO
h_FE
I_C = 40 mA
I_C = 40 mA
I_E = 10 mA
V_CB = 50 V
V_CE = 5 V
R_BE = 10 Ω
I_C = 2.0 A
P_OUT
P_G
η_C
V_CC = 50 V f = 960 to 1215 MHz P_IN = 13 W
Pulse Width = 10 µS Duty Cycle = 10%
MINIMUM TYPICAL MAXIMUM
65
65
3.0
12
20
120
UNITS
V
V
V
mA
---
90
100
W
8.4
dB
38
44
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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