ALR175 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ALR175
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ALR175 is common Base
transistor Designed for
1215 – 1400 MHz, L-Band Applications.
FEATURES:
• Internal Input/Output Matching Network
• P_G = 7.3 dB at 30 W/1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
14 A
V_CC
45 V
P_DISS
330 W @ T_C = 25 °C
T_J
-65 °C to +250 °C
T_STG
-65 °C to +200 °C
θ_JC
0.45 °C/W
PACKAGE STYLE .400 2L FLG (A)
4x .062 x 45°
A
.040 x 45°
2xB
C
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
E
D
G
H
I
J
K
L
M IN IM U M
inches / mm
.135 / 3.43
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03
.490 / 12.45
.690 / 17.53
.890 / 22.61
.003 / 0.08
.052 / 1.32
.118 / 3.00
.193 / 4.90
.100 / 2.54
F
2xR
NP
M
MAXIMUM
inches / mm
.145 / 3.68
.120 / 3.05
.396 / 10.06
.130 / 3.30
.407 / 10.34
.510 / 12.95
.710 / 18.03
.910 / 23.11
.006 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 40 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
65
3.5
25
15
150
UNITS
V
V
V
mA
---
P_G
7.3
7.8
dB
η_C
V_CC = 40 V
P_IN = 30 W f = 1.215 to 1.4 GHz
45
50
%
P_OUT
160
180
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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