ALR100_10 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ALR100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ALR100 is Designed for
1200 – 1400 MHz, L-Band Applications.
FEATURES:
• Internal Input/Output Matching Network
• P_G = 6.0 dB at 100 W/1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
13.5 A
V_CC
32 V
P_DISS
270 W @ T_C = 25 °C
T_J
-65 °C to +250 °C
T_STG
θ_JC
-65 °C to +200 °C
0.55 °^OC/W
PACKAGE STYLE .400 2L FLG
N
B
2
D
L
J
A
1
3
O
E
K
C
4
M
G
P
.062 x 45°
Ø.120
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
F
H
M IN IM U M
inches / mm
.395 / 10.03
.140 / 3.56
.110 / 2.80
.110 / 2.80
.193 / 4.90
.003 / 0.08
.118 / 3.00
.050 / 1.27
.063 / 1.60
.650 / 16.51
.386 / 9.80
.900 / 22.86
.450 / 11.43
.125 / 3.18
.405 / 10.29
.170 / 4.32
.062 / 1.58
I
Q
R
M A X IM U M
inches / mm
.407 / 10.34
.230 / 5.84
.006 / 0.15
.131 / 3.33
1 = COLLECTOR 2&3 = BASE 4 = EMITTER
ORDER CODE: ASI10514
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 32 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
65
3.5
20
15
---
UNITS
V
V
V
mA
---
P_G
η_C
V_CC = 28 V
P_OUT = 100 W f = 1.2 to 1.4 GHz
6.0
50
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
1/1