ALR030 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ALR030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ALR030 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.75 A
V_CC
P_DISS
T_J
T_STG
θ_JC
32 V
63 W @ T_C = 25 ^OC
-65 ^OC to +250 ^OC
-65 ^OC to +200 ^OC
2.4 ^OC/W
PACKAGE STYLE .310 2L FLG
4x .062 x 45°
2xB
ØE
D
G
I
M
DIM
MINIMUM
inches / mm
A
.095 / 2.41
B
.100 / 2.54
C
.050 / 1.27
D
.286 / 7.26
E
.110 / 2.79
F
.306 / 7.77
G
H
I
J
.552 / 14.02
K
.790 / 20.07
L
.300 / 7.62
M
.003 / 0.08
N
.052 / 1.32
P
.118 / 3.00
R
A
H
J
K
L
.148 / 3.76
.400 / 10.16
.119 / 3.02
.040 x 45°
C
F
R
NP
MAXIMUM
inches / mm
.105 / 2.67
.120 / 3.05
.306 / 7.77
.130 / 3.30
.318 / 8.08
.572 / 14.53
.810 / 20.57
.320 / 8.13
.006 / 0.15
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10512
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 10 mA
BV_CER
I_C = 20 mA
R_BE = 10 Ω
BV_EBO
I_E = 1 mA
I_CES
V_E = 28 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
55
55
3.5
5
15
150
UNITS
V
V
V
mA
---
P_G
V_CC = 28 V
P_OUT = 30 W f = 1.2 to 1.4 GHz
7.0
dB
η_C
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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