AJT085 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

AJT085
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AJT085 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
8.0 A
V_CC
P_DISS
T_J
T_STG
θ_JC
40 V
300 W @ T_C ≤ 100 ^OC
-65 ^OC to +250 ^OC
-65 ^OC to +200 ^OC
0.75 ^OC/W
PACKAGE STYLE .400 2NL FLG
2X B
A
.025 x 45°
4x .062 x 45°
ØD
C
E
F
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
G
H
I
J
K
L
MINIMUM
inches / mm
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.193 / 4.90
.450 / 11.43
.125 / 3.18
P
MN
MAXIMUM
inches / mm
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10547
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 25 mA
BV_CER
I_C = 25 mA R_BE = 10 Ω
BV_EBO
I_E = 10 mA
I_CES
V_CE = 35 V
h_FE
V_CE = 5.0 V I_C = 2.0 A
P_G
V_CC = 50 V P_OUT = 85 W
f = 960 – 1215
η_C
MHz
MINIMUM TYPICAL MAXIMUM
55
55
3.5
20
20
200
UNITS
V
V
V
mA
---
7.5
dB
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1