AHV9001 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON HYPERABRUPT VARACTOR DIODE

AHV9001
SILICON HYPERABRUPT VARACTOR DIODE
DESCRIPTION:
The ASI AHV9001 is a Silicon
HyperabruptTuning Varactor Diode for
VHF operation.
FEATURES INCLUDE:
• Octave tunning from 4 to 20 V
• Ultra high Q
• Linnear frequency performance
versus voltage
MAXIMUM RATINGS
I_F
50 mA
V_R
22 V
P_DISS
280 mW @ T_C = 25 °C
T_J
-55 °C to +125 °C
T_STG
-55 °C to +125 °C
PACKAGE STYLE 51
CHARACTERISTICS T_A = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
V_BR
I_R = 10 µA
22
I_R
V_R = 20 V
C_t
V_R = 4.0 V
f = 1.0 MHz
18
C_t
V_R = 8.0 V
f = 1.0 MHz
7.5
C_t
V_R = 20 V
f = 1.0 MHz
3.1
C_T4/C_T20
f = 1.0 MHz
5.4
Q
V_R = 1.0 V
f = 1.0 MHz
220
Notes:
1. DO-7 glass package for HF, VHF and UHF hyperabrupts.
2. Style 51 ceramic package for MICROWAVE Hyperabrupts.
NONE
TYPICAL MAXIMUM
0.10
20
22
8.5
10.5
3.5
3.9
6.0
6.6
UNITS
V
µA
pF
pF
pF
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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