ABL1601A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON BEAM LEAD SCHOTTKY DIODES SERIES TEE

ABL1601A
SILICON BEAM LEAD SCHOTTKY DIODES
SERIES TEE
DESCRIPTION:
The ABL1601A is Designed for Low
Noise Mixer, Phase Detector and
Sampler Applications up to 18.0 GHz.
FEATURES INCLUDE:
• NF = 7.2 dB Max. @ 16 GHz
• Excellent Matching Characteristics
• Lead Strength = 4 Grams min.
PACKAGE STYLE – BL711A
MAXIMUM RATINGS
I_F
100 mA
V_R
2V
P_DISS
T_J
T_STG
θ_JC
100 mW (per junction)
-65 ^OC to +175 ^OC
-65 ^OC to +200 ^OC
1.5 ^OC/mW
ORDER CODE: ABL1601A
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
MINIMUM
V_BR
I_R = 10 µA
2.0
V_F
I_F = 1.0 mA
270
C_J0
∆C_J0
V_R = 0 V
f = 1.0 MHz
R_S
R_S = [( V_F10 mA - V_F 1 mA) - ( V_F100 µA - V_F10 µA)] /
∆R_S
0.009
NF
R_F = 16 GHz
NF(IF) = 1.5 dB
L_O = 0 dBm
R_L = 0 Ω
I_F = 30 MHz
TYPICAL MAXIMUM
320
0.08
0.1
0.02
10
12
2.0
7.2
UNITS
V
mV
pF
Ω
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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