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ABL1601A Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON BEAM LEAD SCHOTTKY DIODES SERIES TEE | |||
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ABL1601A
SILICON BEAM LEAD SCHOTTKY DIODES
SERIES TEE
DESCRIPTION:
The ABL1601A is Designed for Low
Noise Mixer, Phase Detector and
Sampler Applications up to 18.0 GHz.
FEATURES INCLUDE:
⢠NF = 7.2 dB Max. @ 16 GHz
⢠Excellent Matching Characteristics
⢠Lead Strength = 4 Grams min.
PACKAGE STYLE â BL711A
MAXIMUM RATINGS
IF
100 mA
VR
2V
PDISS
TJ
TSTG
θJC
100 mW (per junction)
-65 OC to +175 OC
-65 OC to +200 OC
1.5 OC/mW
ORDER CODE: ABL1601A
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM
VBR
IR = 10 µA
2.0
VF
IF = 1.0 mA
270
CJ0
âCJ0
VR = 0 V
f = 1.0 MHz
RS
RS = [( VF10 mA - VF 1 mA) - ( VF100 µA - VF10 µA)] /
âRS
0.009
NF
RF = 16 GHz
NF(IF) = 1.5 dB
LO = 0 dBm
RL = 0 â¦
IF = 30 MHz
TYPICAL MAXIMUM
320
0.08
0.1
0.02
10
12
2.0
7.2
UNITS
V
mV
pF
â¦
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE ⢠NORTH HOLLYWOOD, CA 91605 ⢠(818) 982-1200 ⢠FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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