A2S263 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON SCHOTTKY BARRIER DETECTOR DIODE

A2S263
SILICON SCHOTTKY BARRIER DETECTOR DIODE
PACKAGE STYLE 01
DESCRIPTION:
The ASI A2S263 is a Silicon P-Type
Schottcky Barrier Zero Bias Detector
Diode Housed in a Hermetically
Sealed Glass Package.
MAXIMUM RATINGS
I_C
20 mA
V_CE
P_DISS
T_J
T_STG
2.5 V
100 mW @ T_C = 25 ^OC
-60 ^OC to +125 ^OC
-60 ^OC to +125 ^OC
CATHODE INDICATED BY COLOR BAND
NONE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
V_b
I_r = 100 µA
F = 10 GHz
R_L = 27 KΩ
BIAS = NONE
t_SS
B.W. = 375 KHz
LOW FREQUENCY CUTOFF = 100 Hz
V_o
f = 10 GHz
P_in = -40 dBM BIAS = NONE
R_V
Tsold t = 5.0 SEC.
MINIMUM TYPICAL MAXIM
0.5
1.5
UNITS
V
-59
5000
800
8000
6000
+230
dBM
µV/µW
Ohms
O_C
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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