5082-3306 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – FAST SWITCHING SILICON PIN DIODE

5082-3306
FAST SWITCHING SILICON PIN DIODE
DESCRIPTION:
The ASI 5082-3306 is a passivated
silicon PIN diode of mesa construction.
Designed for controlling and
processing microwave signals up to Ku
band.
FEATURES:
• 50 W Peak Pulse Power
• Switching time < 5 nS
• Heat Sink Cathode
MAXIMUM RATINGS
P_DISS
0.25 W @ T_C = 25 °C
T_J
-65 °C to +150 °C
T_STG
-65 °C to +150 °C
PACKAGE STYLE 51
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_B
I_R = 10 µA
C_T
V_R = 20 V
f = 1.0 MHz
R_S
I_F = 20 mA
t_rr
I_F = 20 mA
V_R = 10 V
f = 100 MHz
MINIMUM TYPICAL MAXIMUM
70
0.45
UNITS
V
pF
1.0
Ω
10
nS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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