5082-3080 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON PIN DIODE

SILICON PIN DIODE
5082-3080
DESCRIPTION:
The ASI 5082-3080 PIN Diode is
Designed for Low Power RF Switching
and Attenuating Applications.
MAXIMUM RATINGS
I
250 mA
V
100 V
P_DISS
250 mW @ T_C = 25 °C
T_J
-65 °C to +150 °C
T_STG
-65 °C to +150 °C
T_SOLD
260 °C for 5 sec.
PACKAGE STYLE 15
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_R
I_R = 10 µA
V_F
I_F = 100 mA
τ
I_F = 50 mA
I_R = 250 mA
R_S
I_F = 100 mA
f = 100 MHz
C_t
V_R = 50 V
R_H
I_F = 10 µA
R_L
I_F = 20 mA
f = 1.0 MHz
f =100 MHz
f = 100 MHz
MINIMUM TYPICAL MAXIMUM
100
1.0
1300
2.5
UNITS
V
V
µS
Ω
1000
0.4
pF
Ω
8.0
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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