5082-3001 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SILICON PIN DIODE

SILICON PIN DIODE
5082-3001
PACKAGE STYLE 01
DESCRIPTION:
TheASI 5082-3001 is a Silicon PIN
Diode Designed for General Purpose
Attenuator and Switching Applications
from 100 MHz to 3 GHz.
MAXIMUM RATINGS
I_F
100 mA
V_R
200 V
P_DISS
250 mW @ T_A = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
0.7 °C/mW
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_BR
I_R = 10 µA
C_T
V_R = 50 V
f = 1.0 MHz
R_S
I_F = 100 mA
τ
I_F = 50 mA
t_rr
V_R = 10 V
f = 100 MHz
I_R = 250 mA
f = 20 mA
MINIMUM
200
100
TYPICAL
100
MAXIMUM
0.25
1.0
UNITS
V
pF
Ω
nS
nS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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