5082-2830 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – SCHOTTKY BARRIER DUAL DIODE

5082-2830
SCHOTTKY BARRIER DUAL DIODE
DESCRIPTION:
The ASI 5082-2830 is a medium
Barrier Schottky Dual Diode Designed
for Single Balanced Mixer, Phase
Detector and Modulator Applications
up to 2.0 GHz.
FEATURES INCLUDE:
• Medium Barrier
• Excellent Matching
• Rugged design
MAXIMUM RATINGS
I_F
P_DISS
100 mA
75 mW @ T_C = 25 °C
per Junction
T_J
-65 °C to +175 °C
T_STG
-65 °C to +175 °C
T_SOLDER +220 °C for 10 seconds
PACKAGE STYLE 809
TOP VIEW
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V_F
I_F = 1 mA
∆V_F
I_R = 5.0 mA
MINIMUM
2
C_T
V_R = 0 V
Diagonal
Adjecent
∆C_T
V_R = 0
f = 1.0 MHz
f = 1.0 MHz
R_D
I_F = 5.0 mA
TYPICAL
0.50
0.67
MAXIMUM
400
20
0.20
12
UNITS
mV
mV
pF
pF
Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without
REV. A
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