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5082-0008 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – STEP RECOVERY DIODE CHIP
5082-0008
STEP RECOVERY DIODE CHIP
DESCRIPTION:
The ASI 5082-0008 is a Silicon Oxide
Passivated SRD Chip Designed for
hybrid local oscillator Applications.
FEATURES:
• Gold contact metalization
• Passivated Chip
PACKAGE STYLE CHIP
MAXIMUM RATINGS
I
100 mA
V
15 V
PDISS
TJ
TSTG
100 mW @ TC = 25 °C
-60 °C to +200 °C
-65 °C to +200 °C
TSOLD
t ≤1.0 MINUTE +310 °C
CHIP = 0.020 X 0.020 X 0.011 INCHES
TOP BOND CONTACT GOLD = 0.0025 INCHES
BOTTOM CONTACT GOLD (FULL AREA)
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
VB
IR = 10 µA
CJ
VR = 10 V
f = 1.0 MHz
RS
IF = 20 mA
τ
IF = 10 mA
IR = 6.0 mA
tt
CL = 100 pc
f = 100 MHz
MINIMUM TYPICAL MAXIMUM
15
0.38
UNITS
V
pF
0.8
Ohms
10
µS
60
pS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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