40822 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – MOS FIELD-EFFECT TRANSISTOR

40822
MOS FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The ASI 40822 is a N-Channel Dual-
Gate Depletion Type Transistor With
Monolithic Gate Protection Diodes,
used in RF,IF Amplifier and Mixer
Applications up to 150 MHz.
MAXIMUM RATINGS
I_D
50 mA
V_D
P_DISS
T_J
T_STG
24 V
330 mW @ T_A = 25 ^OC
-65 ^OC to +175 ^OC
-65 ^OC to +175 ^OC
PACKAGE STYLE TO-72
1 = Drain
2 = Gate #2
3 = Gate #1
4 = Source, Case, and Substrate
CHARACTERISTICS T_A = 25 ^OC
SYMBOL
TEST CONDITIONS
V_G1S(OFF)
V_DS = 15 V V_G2S = 4.0 V I_D = 50 µA
V_G2S(OFF)
V_DS = 15 V V_G1S = 0 V
I_D = 50 µA
I_G1SSF
V_G1S = 6.0 V V_G2S = V_DS = 0 V
I_G1SSR
V_G1S = -6.0 V V_G2S = V_DS = 0 V
I_G2SSF
V_G2S = 6.0 V V_G1S = V_DS = 0 V
I_G2SSR
V_G2S = -6.0 V V_G1S = V_DS = 0 V
I_DS
V_DS = 15 V V_G1S = 0 V
V_G2S = 4.0 V
V_(BR)G1
I_G1 = ±100 µA
V_(BR)G2
g_fs
I_G2 = ±100 µA
V_DS = 15 V V_G2S = 4.0 V
f = 1.0 KHz
I_D = 10 mA
C_rss
C_iss
C_oss
G_PS
NF
V_DS = 15 V V_G2S = 4.0 V
f = 1.0 MHz
V_DS = 15 V V_G2S = 4.0 V
= 200 MHz
I_D = 10 mA
I_D = 10 mA
MINIMUM
5.0
0.005
f
19
NONE
TYPICAL MAXIMUM
-2.0
-4.0
-2.0
-4.0
50
50
50
50
15
30
9.0
9.0
12000
0.03
6.5
9.5
2.0
24
2.0
3.5
UNITS
V
V
µA
µA
µA
µA
mA
V
V
µmho
pF
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without
REV. A
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