2SK410 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET (HF/VHF power amplifier)

2SK410
SILICON N-CHANNEL MOS FET
DESCRIPTION:
The ASI 2SK410 is a silicon n-channel mos fet
designed for HF/VHF power amplifier
applications.
FEATURES:
• P_G = 17 dB typ. at 100 W/28 MHz
• Omnigold™ Metalization System
• Common Source configuration
• RoHS compliant
MAXIMUM RATINGS
I_D
8A
V_DSS
180 V
V_GSS
±20 V
P_CH
120 W @ T_C = 25 °C
T_CH
-55 °C to +150 °C
T_STG
-55 °C to +150 °C
PACKAGE STYLE .500 6L FLG
C
A
31
D
2x ØN
FULL R
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
24
B
E
.725/18,42
G
F
H
M IN IM U M
inches / m m
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
JI
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
M AXIMUM
inches / m m
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
1 = COLLECTOR 2 = BASE 3&4 = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
V_(BR)DSS
I_C = 100 mA
V_(BR)GSS
I_G = ±100 µA
V_DS = 0 V
V_GS(OFF)
I_D = 1.0 mA
V_DS = 10 V
I_DSS
V_DSS = 180 V
V_GS = 0 V
V_DS(on)
I_D = 4.0 A
V_GS = 10 V
|γ_fs|
I_D = 3.0 A
V_DS = 20 V
MINIMUM TYPICAL MAXIMUM
180
±20
0.5
3.0
1.0
3.8
6.0
0.9
1.25
UNITS
V
V
V
mA
V
S
C_ISS
V_GS = 5.0 V
V_DS = 0.0 V
f = 1.0 MHz
350
C_OSS
V_GS = -5.0 V
V_DS = 50. V
f = 1.0 MHz
220
pF
C_RSS
V_GS =
V_GD = - 50. V
f = 1.0 MHz
15
P_OUT
V_DD = 80 V f = 28 MHz
140
W
η
I_DQ =100 mA P_IN = 5 W
80
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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