2SC3133 Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

2SC3133
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC3133 is Designed for RF
Power amplifiers in HF band mobile radio
Applications.
MAXIMUM RATINGS
I_C
6.0 A
V_CE
25 V
V_CB
60 V
P_DISS
20 W @ T_C = 25 °C
T_STG
-65 °C to +150 °C
θ_JC
6.25 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CBO
I_C = 5.0 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 30 V
I_EBO
V_EB = 4.0 V
h_FE
V_CE = 12 V
I_C = 10 mA
P_O
η_C
V_CC = 12 V
P_IN = 0.5 W
MINIMUM TYPICAL MAXIMUM
25
60
5.0
500
500
10
50
180
UNITS
V
V
V
µA
µA
---
f = 27 MHz
13
16
dB
60
70
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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