2SC2951 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz.

2SC2951
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI 2SC2951 is a High
Frequency Transistor Designed for
General Purpose Oscillator
Applications up to 10 GHz.
FEATURES:
• P_OSC = 630 mW Typical at 7.5 GHz
• Omnigold™ Metallization System
PACKAGE STYLE .200 2L FLG
MAXIMUM RATINGS
I_C
440 mA
V_CE
16 V
V_CB
25 V
P_DISS
9.7 W @ T_C = 25 °C
T_J
-65 to +200 °C
T_STG
-65 to +200 °C
θ_JC
18 °C/W
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 1.0 mA
BV_CBO
I_C = 100 µA
BV_EBO
I_E = 100 µA
I_CBO
V_CB = 15 V
I_EBO
V_EB = 1.0 V
h_FE
V_CE = 8.0 V
I_C = 200 mA
C_OB
S21²
P_OSC
V_CB = 10 V
V_CC = 8.0 V
V_CE = 12 V
I_C = 200 mA
I_C = 200 mA
f = 1.0 MHz
f = 1.0 GHz
f = 7.5 GHz
MINIMUM TYPICAL MAXIMUM
16
25
1.5
1.0
4.0
20
200
UNITS
V
V
V
µA
µA
---
2.9
4.0
pF
3.5
dB
630
mW
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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