2SC2893 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

2SC2893
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2893 is Designed for
use in UHF amplifiers up to 400 MHz.
FEATURES:
• P_OUT = 10.7 W Typical at 400 MHz
• Omnigold™ Metallization System
MAXIMUM RATINGS
I_C
1.5 A
V_CB
55 V
V_CE
32 V
V_EB
3.0 V
P_DISS
22 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
8.0 °C/W
PACKAGE STYLE .280 4L STUD
D IM
A
B
C
D
E
F
G
H
I
J
K
A
45°
C
B
E
E
B
D
C
E
F
G
H
K
M IN IM U M
in c h e s / m m
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.245 / 6.22
.175 / 4.45
.275 / 6.99
.572 / 14.53
.130 / 3.30
.640 / 16.26
J
I
#8-32 UN C
M A X IM U M
in c h e s / m m
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 60 mA
BV_CES
I_C = 8.0 mA
V_BE = 0 V
I_EBO
V_CE = 2.0 V
I_CBO
V_CB = 30 V
h_FE
V_CE = 10 V
I_C = 400 mA
C_ob
V_CB = 28 V
f = 1.0 MHz
P_out
V_CE = 28 V
I_C = 400 mA
f = 400 MHz
η_c
P_IN = 0.63 W
MINIMUM TYPICAL MAXIMUM
32
55
500
500
20
200
UNITS
V
V
µA
µA
---
10
15
pF
7.9
10.7
W
55
65
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV 0
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