2SC2585 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF TRANSISTOR

2SC2585
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The 2SC2585 is a Common Emitter
Device Designed for Low Niose
Amplifier and Medium Power Oscillator
Applications up to 8.5 GHz.
MAXIMUM RATINGS
I_C
65 mA
V_CEO
12 V
V_CBO
25 V
V_EB
P_T
T_J
T_STG
θ_JC
1.5 V
400 mW @ T_C = 166 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
85 ^OC/W
PACKAGE STYLE
DIMENSIONS IN MILLIMETERS
1 = BASE 3 = COLLECTOR
2 & 4 = EMITTER
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
I_CBO
V_CB = 8.0 V
I_EBO
V_EB = 1.0 V
h_FE
V_CE = 8.0 V
I_C = 7.0 mA
f_t
V_CE = 8.0 V
I_C = 20 mA
C_cb
V_CB = 10 V
f = 1.0 GHz
f = 1.0 MHz
2
|S21E|
V_CE = 8.0 V
I_C = 20 mA
G_NF
M_AG
NF
V_CE = 8.0 V
V_CE = 8.0 V
I_C = 7.0 mA
I_C = 10 mA
V_CE = 8.0 V I_C = 7.0 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
100
100
50
115
250
UNITS
µA
µA
---
8.5
GHz
0.2
0.6
pF
18.0
10.0
11.0
dB
6.5
11.0
dB
15.0
dB
10.0
2.0
2.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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