2SC1972 Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF
power amplifiers on VHF band mobile
radio applications.
FEATURES INCLUDE:
• Replaces Original 2SC1972 in
Most Applications
• High Gain Reduces Drive
Requirements
• Economical TO-220CE Package
MAXIMUM RATINGS
I_C
3.5 A
V_CBO
35 V
P_DISS
25 W @ T_C = 25 °C
T_STG
-55 °C to +175 °C
θ_JC
6.0 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CBO
I_C = 10 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CES = 25 V
I_EBO
V_EB = 3.0 V
h_FE
V_CE = 10 V
I_C = 100 mA
η_C
P_OUT
V_CC = 13.5 V
P_IN = 2.5 W
f =175 MHz
MINIMUM TYPICAL MAXIMUM
17
35
4.0
100
500
10
50
180
60
70
14
15
UNITS
V
V
V
µA
µA
---
%
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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