2SC1946A Datasheet, PDF (1/1 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

2SC1946A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The 2SC1946A is Designed for
12.5 V 175 MHz Large-Signal Power
Amplifier Applications.
FEATURES INCLUDE:
• High Common Emitter Power Gain
• Output Power = 30 W
MAXIMUM RATINGS
I_C
8.0 A
V_CE
16 V
V_CB
36 V
P_DISS
100 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.75 °C/W
PACKAGE STYLE .380" 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS T_C = 25 °C
SYMBOL
TEST CONDITIONS
BV_CES
I_C = 25 mA
BV_CEO
I_C = 25 mA
BV_EBO
I_E = 5.0 mA
I_CES
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
16
4.0
5.0
40
75
150
UNITS
V
V
V
mA
---
C_ob
V_CB = 15 V
f = 1.0 MHz
75
100
pF
G_PE
V_CC = 12.5 V
P_out = 30 W
f = 175 MHz
10
11
DB
η
60
70
%
ψ
V_CC = 15.5 V
P_IN = 2.0 dB Overdrive
Load VSWR = 30:1 ALL PHASE ANGLES
No Degradation in Power Output
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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