2SC1252 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – 2SC1252

2SC1252
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2SC1252 is a High Frequency
Transistor, Designed for Wide Band
Amplifier Applications up to 500 MHz.
FEATURES INCLUDE:
• High Gain -17 dB Typ. @ 200 MHz
• Low NF - 3.0 dB Typ. @ 200 MHz
• Hermetic TO-39 Package
MAXIMUM RATINGS
I_C
400 mA
V_CB
45 V
V_CE
25 V
P_DISS
5 W @ T_C = 25 °C
T_J
-65 to +200 °C
T_STG
-65 to +200 °C
θ_JC
35 °C/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 & 4 = Collector (Case)
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CBO
I_C = 100 µA
I_CBO
V_CE = 30 V
I_EBO
V_EB = 2.0 V
h_FE
V_CE = 10 V
I_C = 50 mA
MINIMUM
25
45
20
f_t
V_CE = 15 V
V_CE = 15 V
C_OB
V_CB = 15 V
I_C = 15 mA
I_C = 70 mA
f = 200 MHz
f = 1.0 MHz
1200
1400
G_PE
V_CE = 15 V
I_C = 50 mA f = 200 MHz
15
NF
V_CE = 15 V
I_C = 30 mA f = 200 MHz
TYPICAL MAXIMUM
100
500
200
3.0
17
3.0
4.0
UNITS
V
V
nA
nA
---
MHz
pF
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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