2SC1251 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

2SC1251
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The 2SC1251 is a Common Emitter
Device Designed for High Linearity
Class A Amplifiers up to 2.0 GHz.
FEATURES INCLUDE:
• Direct Replacement for NE74020
• High Gain - 10 dB min. @ 1.0 GHz
• Gold Metalization
MAXIMUM RATINGS
I_C
300 mA
V_CB
P_DISS
T_J
T_STG
θ_JC
45 V
5.3W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
33 ^OC/W
PACKAGE STYLE .204 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CBO
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
25
45
3.0
20
200
UNITS
V
V
V
---
C_OB
V_CB = 15 V
f = 1.0 MHz
3.0
pF
P_G
V_CE = 15 V
I_C = 100 mA
P_OUT = 0.5 W
13
P_1dB
f = 1000 MHz
+27
+29
dB
dBm
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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