2N918 Datasheet, PDF (1/1 Pages) Semicoa Semiconductor – Type 2N918 Geometry 0013 Polarity NPN

2N918
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N918 is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I_C
50 mA
V_CE
P_DISS
T_J
T_STG
15 V
300 mW @ T_C = 25 ^OC
200 mW @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 3.0 mA
BV_CBO
I_CBO
BV_EBO
I_C = 1.0 µA
V_CB = 15 V
V_CB = 15 V
I_E = 10 µA
T_A = 150 ^OC
h_FE
V_CE = 1.0 V I_C = 3.0 mA
V_CE(SAT)
I_C = 10 mA
I_B = 1.0 mA
V_BE(SAT)
I_C = 10 mA
I_B = 1.0 mA
NONE
MINIMUM TYPICAL MAXIMUM
15
30
0.01
1.0
3.0
20
0.4
1.0
UNITS
V
V
µA
V
---
V
V
f_t
V_CE = 10 V
I_C = 4.0 mA
C_ob
V_CB = 0 V
V_CB = 10 V
C_ib
V_EB = 0.5 V
f = 100 MHz
600
f = 140 KHz
f = 140 KHz
f = 140 KHz
MHz
3.0
pF
1.7
2.0
pF
N_F
V_CE = 6.0 V
I_C = 1.0 mA
G_pe
V_CB = 12 V
I_C = 6.0 mA
P_out
η
V_CB = 15 V
I_C = 8.0 mA
f = 60 MHz
f = 200 MHz
15
f = 500 MHz
30
25
6.0
dB
dB
mW
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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