2N6439 Datasheet, PDF (1/1 Pages) Motorola, Inc – 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON

2N6439
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N6439 is a Common
Emitter Device Designed For Large
signal output amplifier stages in the
225-400 MHz range.
FEATURES INCLUDE:
• Internal Input Matching Network
• 30:1 Load VSWR Capability
• All Gold Metalization
MAXIMUM RATINGS
V_CB
60 V
P_DISS
146 W @ T_C = 25 °C
T_STG
θ_JC
-65 °C to +200 °C
1.2 °C/W
PACKAGE STYLE .500 6L FLG
1 = Collector 2 = Base
3 & 4 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
BV_CBO
I_C = 50 mA
33
BV_CES
I_C = 50 mA
60
BV_CBO
I_E = 5.0 mA
4.0
h_FE
V_CE = 5.0 V I_C = 1.0 A
10
C_OB
V_CB = 28 V
f = 1 MHz
G_Pe
V_CE = 28 V
P_OUT = 60 W
f =225- 400 MHz 7.8
G_Pe
7.8
η_C
V_CE = 28 V
P_OUT = 60 W
f = 400 MHz
55
Ψ
30:1
TYPICAL MAXIMUM
100
67
75
8.5
10.0
UNITS
V
V
V
---
pF
dB
%
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
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Specifications are subject to change without notice.