2N6166 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

2N6166
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N6166 is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 200
MHz.
FEATURES:
• η_C = 60 % min. @ 100 W/150 MHz
• P_G = 6.0 dB min. @ 100 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
9.0 A
V_CBO
65 V
V_EBO
4.0 V
P_DISS
117 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.5 °C/W
PACKAGE STYLE .500 4L FLG
.112x45° L
A
E
FULL R
C
Ø.125 NOM.
C
B
B
E
E
H
D
G
F
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10790
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 200 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 Ma
I_CES
V_CE = 30 V
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
65
35
4.0
5.0
30
5.0
UNITS
V
V
V
mA
mA
---
C_OB
V_CE = 28 V
f = 1.0 MHz
130
pF
P_G
6.0
dB
η_C
V_CC = 28 V
P_OUT = 100 W
f = 150 MHz
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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