2N6093 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

2N6093
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The 2N6093 is a High Gain Linear RF
Power Amplifier Used in Class A or
Class B Applications With Individual
Ballast Emitter Resistor and Built in
Temperature Sensing Diode.
MAXIMUM RATINGS
I_C
10 A
V_CE
P_DISS
T_J
T_STG
θ_JC
35 V
83.3 W @ T_C = 75 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
1.50 ^OC/W
PACKAGE STYLE TO-217
¼-28 UNF Thread
1 = Emitter & Diode Cathode
2 = Collector
3 = Base
4 = Diode Anode
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 200 mA
BV_CES
I_CES
I_C = 200 mA
V_CE = 60 V
T_C = 55 ^OC
BV_EBO
I_E = 20 mA
h_FE
V_CE = 6.0 V I_C = 5.0 A
V_F
I_F = 10 mA
h_fe
V_CE = 28 V
I_C = 1.0 A
f = 50 MHz
C_OB
V_CB = 30 V
f = 1.0 MHz
P_IE
G_PE
η_C
IMD
V_CC = 28 V
I_C = 20 mA P_OE = 37.5 W
f = 30 MHz P_OE = 75.0 W
V_CC = 28 V
I_C = 20 mA
P_OE = 75.0 W
f = 30 MHz
MINIMUM
35
70
3.5
20
2.0
13
40
NONE
TYPICAL MAXIMUM
30
0.8
250
1.88
3.75
-30
UNITS
V
V
mA
V
---
V
---
pF
W
dB
%
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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