2N5945 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

2N5945
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N5945 is Designed for
FM Land Mobile Applications in the
400 to 960 MHz.
FEATURES:
• Common Emitter
• P_G = 9.0 dB at 2.0 W/470 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.8 A
V_CBO
36 V
V_CEO
16 V
V_EBO
4.0 V
P_DISS
15 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
11.6 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 100 mA
BV_EBO
I_E = 2.0 mA
I_CBO
V_CB = 15 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20
---
---
UNITS
V
V
V
mA
---
C_ob
V_CB = 12.5 V
f = 1.0 MHz
---
18
25
pF
P_G
V_CC = 12.5 V
P_OUT = 4.0 W
f = 470 MHz
9.0
10
dB
η_c
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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