2N5943 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HIGH FREQUENCY TRANSISTOR

2N5943
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5943 is a High Frequency
Transistor for General Purpose
Amplifier Applications.
MAXIMUM RATINGS
I_C
400 mA
V_CE
P_DISS
T_J
T_STG
θ_JC
30 V
1.0 W @ T_A = 25 ^OC
3.5 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
125 ^OC/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
BV_CBO
BV_EBO
I_C = 5.0 mA
I_C = 100 µA
I_E = 100 µA
I_CEO
V_CE = 20 V
I_CBO
V_CB = 15 V
h_FE
V_CE = 15 V I_C = 50 mA
V_CE(SAT)
I_C = 100 mA I_B = 10 mA
V_BE(SAT)
f_t
C_cb
I_C = 100 mA
V_CE = 15 V
V_CB = 30 V
I_B = 10 mA
I_C = 25 mA
I_C = 50 mA
I_C = 100 mA
f = 200 MHz
f = 200 MHz
f = 200 MHz
f = 100 KHz
C_eb
V_CB = 0.5 V
f = 100 KHz
h_fe
V_CE = 15 V
I_C = 50 mA
f = 1.0 KHz
r_b'Cc
V_CE = 15 V
I_C = 50 mA
f = 31.8 MHz
N_F
V_CE = 15 V
I_C = 50 mA
f = 200 MHz
G_pe
V_CC = 15 V I_C = 50 mA
f = 200 MHz
I_M
V_CC = 15 V I_C = 50 mA V_out = +50 dbmV
X_M
V_CC = 15 V I_C = 50 mA V_out = +50 dbmV
MINIMUM
30
40
3.5
25
1000
120
1000
1.0
25
2.0
7.0
NONE
TYPICAL MAXIMUM
50
10
300
0.2
1.0
2400
3.5
15
350
20
8.0
-50
-45
UNITS
V
V
V
µA
µA
---
V
V
MHz
pF
pF
---
pS
dB
dB
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
1/1