2N5109 Datasheet, PDF (1/1 Pages) Semicoa Semiconductor – Type 2N5109 Geometry 1007 Polarity NPN

2N5109
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The 2N5109 is a High Frequency
Transistor for General Purpose
Amplifier Applications.
MAXIMUM RATINGS
I_C
400 mA
V_CE
P_DISS
20 V
1.0 W @ T_A = 25 ^OC
2.5 W @ T_C = 75 ^OC
1 = Emitter 2 = Base
3 = Collector
CHARACTERISTICS TA = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CER
I_C = 5.0 mA
R_BE = 10Ω
BV_CBO
I_C = 100 µA
I_CEX
V_CE = 35 V
V_CE = 15 V
V_BE = -1.50 V
V_BE = -1.50 V T_C = 150 ^OC
I_CEO
V_CE = 15 V
I_EBO
V_EB = 3.0 V
h_FE
V_CE = 15 V
I_C = 50 mA
V_CE = 5.0 V
I_C = 360 mA
V_CE(SAT)
I_C = 100mA
I_B = 10 mA
MINIMUM
20
40
40
40
5.0
f_t
V_CE = 15 V
C_OB
V_CB = 15 V
I_C = 50 mA
f = 200 MHz
f = 1.0 MHz
1200
N_F
V_CE = 15 V I_C = 10 mA R_G = 50 Ω f = 200 MHz
G_ve
V_CC = 15 V I_C = 50 mA f = 50 to 216 MHz
1.1
P_in
V_CC = 15 V I_C = 50 mA Rs = 50 Ω f = 200 MHz
NONE
TYPICAL MAXIMUM
5.0
20
100
220
0.5
3.5
3.0
0.1
UNITS
V
V
V
mA
µA
µA
---
V
MHz
pF
dB
dB
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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