2N5108 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HIGH FREQUENCY TRANSISTOR

2N5108
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5108 is a Designed for
General Purpose Class C Amplifier
Applications Up to 1 GHz.
FEATURES:
• G_PE = 6.0 dB Typ. at 1.0 GHz
• F_T = 1,500 MHz Typ. at 15 V/ 50 mA
• Hermetic TO-39 Package
MAXIMUM RATINGS
I_C
400 mA
V_CB
55 V
V_CE
P_DISS
T_J
T_STG
θ_JC
30 V
3.5 W @ T_C = 25 ^OC
-65 to +200 ^OC
-65 to +200 ^OC
50 ^OC/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
CHARACTERISTICS TA = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CER
BV_EBO
I_CES
I_CEO
I_C = 5.0 mA
I_E = 100 µA
V_CE = 50 V
V_CE = 15 V
V_CE = 15 V
R_BE = 10Ω
T_C = +150 ^OC
MINIMUM
55
3.0
f_t
V_CE = 15 V
I_C = 50 mA
f = 200 MHz
1200
C_OB
V_CB = 30 V
f = 1.0 MHz
G_PE
η_C
V_CC = 28 V P_OUT = 1.0 W f = 200 MHz
5.0
35
NONE
TYPICAL MAXIMUM
1.0
10.0
20
3.0
UNITS
V
V
µA
mA
µA
MHz
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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