2N3866 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistors

2N3866
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI 2N3866 is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I_C
400 mA
V_CE
P_DISS
T_J
T_STG
θ_JC
30 V
5.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
35 ^OC/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CER
I_C = 5.0 mA R_BE = 10 Ω
BV_EBO
I_C = 100 µA
I_CEX
V_CE = 55 V
V_CE = 30 V
V_BE = -1.5 V
V_BE = -1.5 V
T_C = 200 ^OC
I_CEO
V_CE = 28 V
I_EBO
V_EB = 3.5 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
I_C = 360 mA
V_CE(SAT)
I_C = 100 mA
I_B = 20 mA
MINIMUM
30
55
3.5
10
5.0
f_t
V_CE = 15 V
I_C = 50 mA
f = 200 MHz
500
C_OB
V_CB = 28 V
f = 1.0 MHz
G_PE
V_CC = 28 V
P_out = 1.0 W f = 400 MHz
10
η_c
45
NONE
TYPICAL MAXIMUM
100
500
20
100
200
1.0
3.0
UNITS
V
V
V
µA
µA
µA
---
V
MHz
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1