2N3570 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON HIGH FREQUENCY TRANSISTOR

2N3570
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N3570 is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I_C
50 mA
V_CB
30 V
V_CE
15 V
V_EB
P_DISS
T_J
T_STG
θ_JC
3.0 V
200 mW @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
500 ^OC/W
PACKAGE STYLE TO- 72
1 = EMITTER
2 = BASE
3 = COLLECTOR 4 = CASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 2 mA
BV_CBO
I_C = 1.0 µA
I_CBO
V_CB = 6.0 V
T_A = 150 ^OC
BV_EBO
I_E = 10 µA
h_FE
V_CE = 6.0 V
I_C = 5.0 mA
NONE
MINIMUM TYPICAL MAXIMUM
15
30
10
1.0
3.0
20
150
UNITS
V
V
µA
V
---
C_ob
h_FE
h_fe
r_b´C_C
V_CB = 6 V
V_CE = 6 V
V_CE = 6 V
V_CB = 6 V
I_C = 5 mA
I_C = 5 mA
I_E = -5 mA
f = 1.0 MHz
0.75
pF
20
150
---
f = 400 MHz
3.75
4.25
6
---
f = 79.8 MHz
1
5
8
pF
P_OSC
N_F
V_CC = 20 V I_C = 15 mA
f = 1.0 GHz
V_CB = 6 V I_C = 2 mA R_G = 50 Ω f = 1.0 GHz
60
mW
6
7
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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