2N3553 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistor

2N3553
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI 2N3553 is Designed for
Amplifier, Oscillator and Driver
Applications Covering VHF-UHF
Frequency.
MAXIMUM RATINGS
I_C
1.0 A
V_CE
P_DISS
T_J
T_STG
θ_JC
40 V
7.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
25 ^OC/W
PACKAGE STYLE TO- 39
1 = EMITTER 2 = BASE
3 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 200 mA
I_CEX
V_CE = 65 V
V_CE = 30 V
V_BE = -1.5 V
V_BE = -1.5 V
I_CEO
V_CE = 30 V
I_EBO
V_EB = 4.0 V
h_FE
V_CE = 5.0 V I_C = 250 mA
V_CE(SAT)
I_C = 250 mA I_B = 50 mA
T_C = 200 ^OC
MINIMUM TYPICAL MAXIMUM
40
1.0
5.0
100
100
10
1.0
UNITS
V
mA
µA
µA
---
V
C_ob
V_CB = 30 V
f_t
V_CE = 28 V
I_C = 100 mA
f = 1.0 MHz
f = 100 MHz
10
pF
500
MHz
P_in
G_P
V_CE = 28 V
P_out = 2.5 W
η_C
f = 175 MHz
10
50
250
mW
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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