2N3375 Datasheet, PDF (1/1 Pages) Microsemi Corporation – RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND

2N3375
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N3375 is Designed for
Class A,B,C Amplifier,Oscillator and
Driver Applications Covering the
VHF-UHF Region.
FEATURES INCLUDE:
• Isolated Package
MAXIMUM RATINGS
I_C
1.5 A
V_CE
P_DISS
T_J
T_STG
θ_JC
40 V
11.6 W @ T_C = 25 ^OC
-65^OC to +200 ^OC
-65^OC to +200 ^OC
15 ^OC/W
PACKAGE STYLE TO- 60(ISOLATED)
1 = EMITTER 2 = BASE
3 = COLLECTOR
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 200 mA
BV_CEX
V_BE = -1.5 V I_C = 100 mA
BV_CBO
I_C = 500 µA
I_CEO
V_CE = 30 V
I_EBO
V_EB = 4.0 V
h_FE
V_CE = 5.0 V I_C = 250 mA
V_CE(SAT)
I_C = 500 mA I_B = 100 mA
MINIMUM TYPICAL MAXIMUM
40
65
65
100
100
10
1.0
UNITS
V
V
V
µA
µA
---
V
C_ob
V_CB = 30 V
f_t
V_CE = 28 V I_C = 150 mA
f = 1.0 MHz
f = 100 MHz
10
pF
500
MHz
P_out
3.0
W
G_P
V_CE = 28 V
P_in = 1.0 W
f = 400 MHz
4.8
dB
η
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1